Roy

Tania Roy

Associate Professor of Electrical and Computer Engineering

Research Interests

Energy-efficient electronics
Two-dimensional materials
Neuromorphic Computing
Optoelectronics
Wide bandgap materials
High power electronics
Radiation effects and reliability

Bio

Roy's work focuses on developing hardware for artificial intelligence applications using novel functional materials including two-dimensional materials. By modeling computer architecture after the basic structure of synapses and neurons, hardware can be manufactured to be better adapted to pattern recognition algorithms. She also focuses on high-power electronics made with gallium nitride and other wide bandgap semiconductors. She is currently working on investigating the defects produced by ionizing radiation in GaN devices. She is particularly interested in studying the reliability of emerging devices and materials systems using electrical characterization techniques.

Education

  • M.S. Vanderbilt University, 2008
  • Ph.D. Vanderbilt University, 2011
  • Georgia Institute of Technology, 2013
  • University of California, Berkeley, 2016

Positions

  • Associate Professor of Electrical and Computer Engineering

Awards, Honors, and Distinctions

  • Presidential Early Career Awards for Scientists and Engineers (PECASE). National Science Foundation (NSF). 2024

Courses Taught

  • ECE 899: Special Readings in Electrical Engineering
  • ECE 891: Internship
  • ECE 526: Semiconductor Devices for Integrated Circuits
  • ECE 493: Projects in Electrical and Computer Engineering
  • ECE 391: Projects in Electrical and Computer Engineering
  • ECE 230L: Introduction to Microelectronic Devices and Circuits
  • ECE 230L9: Introduction to Microelectronic Devices and Circuits-Lab

In the News

Representative Publications

  • Rahman, Md Sazzadur, Shahin Hashemkhani, Arijit Sarkar, Jiazheng Chen, Chen Chen, Joan M. Redwing, Rajkumar Kubendran, and Tania Roy. “Electrically Reconfigurable Floating Gate Optoelectronic Synaptic Pixels for In-sensor Convolutional Image Feature Extraction with Built-in Contrast Enhancement.” ACS Nano 20, no. 20 (May 2026): 14799–812. https://doi.org/10.1021/acsnano.6c03713.
  • Ravel, Victoria M., Sarah R. Evans, Samantha K. Holmes, James L. Doherty, Md Sazzadur Rahman, Tania Roy, and Aaron D. Franklin. “Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure.” ACS Nano 20, no. 8 (March 2026): 7127–36. https://doi.org/10.1021/acsnano.5c19797.
  • Huang, Jianming, Arijit Sarkar, Yajing Chai, Yezhu Lv, Haihui Cai, Yehao Wu, Tania Roy, and Yury Yuryevich Illarionov. “Long-Term Operational Stability of Dual-Gated ITO/HfO2 Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping.” ACS Nano 20, no. 10 (March 2026): 8321–34. https://doi.org/10.1021/acsnano.5c17437.
  • Ko, T. J., H. Li, S. A. Mofid, C. Yoo, E. Okogbue, S. S. Han, M. S. Shawkat, et al. “Erratum: Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications (iScience (2020) 23(11), (S2589004220308683), (10.1016/j.isci.2020.101676)).” Iscience 28, no. 4 (April 18, 2025). https://doi.org/10.1016/j.isci.2025.112255.
  • Chen, Jiazheng, Arijit Sarkar, Md Sazzadur Rahman, Victoria Ravel, Aaron D. Franklin, and Tania Roy. “Robust Memcapacitive Synapse Array for Energy-Efficient Motion Detection.” ACS Nano 19, no. 16 (April 2025): 15974–82. https://doi.org/10.1021/acsnano.5c02340.